2SD1468 1a , 30v npn plastic-encapsulated transistor elektronische bauelemente 26-mar-2012 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free features low saturation voltage ideal for low voltage, high current dribes high dc current gain and high current classification of h fe absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 30 v collector to emitter voltage v ceo 15 v emitter to base voltage v ebo 5 v collector current - continuous i c 1 a collector power dissipation p c 625 w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit test condition collector to base breakdown voltage v (br)cbo 30 - - v i c =50 a, i e =0 collector to emitter breakdown voltage v (br)ceo 15 - - v i c =1ma, i b =0 emitter to base breakdown voltage v (br)ebo 5 - - v i e =50 a, i c =0 collector cut C off current i cbo - - 0.5 a v cb =20v, i e =0 emitter cut C off current i ebo - - 0.5 a v eb =4v, i c =0 dc current gain h fe 120 - 560 v ce =3v, i c =100ma collector to emitter saturation voltage v ce(sat) - - 0.4 v i c =500ma, i b =50ma transition frequency f t 50 - - mhz v ce =5v, i c =50ma, f=100mhz collector output capacitance c ob - - 30 pf v cb =10v, i e =0, f=1mhz product-rank 2SD1468-q 2SD1468-r 2SD1468-s range 120~270 180~390 270~560 3 base 1 emitter collector 2 to-92 1 11 1 emitter 2 22 2 collector 3 33 3 base ref. millimeter min. max. a 4.40 4.70 b 4.30 4.70 c 12.70 - d 3.30 3.81 e 0.36 0.56 f 0.36 0.51 g 1.27 typ. h 1. 10 - j 2.42 2.66 k 0.36 0.76
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